unisonic technologies co., ltd 10NN15 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2011unisonic technologies co., ltd qw-r502-565.b dual n-channel enhancement mode power mosfet ? description the utc 10NN15 is a dual n-channel enhancement mode power mosfet using utc?s perfect technol ogy to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? features * high switching speed * low gate charge * simple drive requirement ? symbol sop-8 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 4 5, 6 7, 8 packing 10NN15l-s08-r 10NN15g-s08-r sop-8 s1 g1 s2 g2 d2 d1 tape reel note: pin assignment: g: gate d: drain s: source
10NN15 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-565.b ? pin configuration
10NN15 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-565.b ? absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 150 v gate-source voltage v gss 20 v continuous (note 3) i d 3 a drain current pulsed (note 2) i dm 12 a power dissipation p d 2 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by max. junction temperature. 3. surface mounted on 1in2 copper pad of fr4 board, t 10sec; 135c/w when mounted on min. copper pad. ? thermal characteristics parameter symbol ratings unit junction to ambient (note 3) ja 62.5 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 150 v drain-source leakage current i dss v ds =150v, v gs =0v 10 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2 4 v static drain-source on-state resistance r ds(on) v gs =10v, i d =3a 400 m ? dynamic parameters input capacitance c iss 420 672 pf output capacitance c oss 60 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 40 pf switching parameters total gate charge q g 10 16 nc gate to source charge q gs 2 nc gate to drain charge q gd v gs =10v, v ds =120v, i d =3a (note 1, 2) 4 nc turn-on delay time t d(on) 6.5 ns rise time t r 7 ns turn-off delay time t d(off) 14 ns fall-time t f v ds =75v, v gs =10v, i d =3a, r g =3.3 ? (note 1, 2) 35 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =3a, v gs =0v 1.3 v body diode reverse recovery time t rr 40 ns body diode reverse recovery charge q rr i s =3a, v gs =0v, di f /dt=100a/s 75 c note: 1. pulse width 300s, duty cycle 2% . 2. essentially independent of operating temperature.
10NN15 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-565.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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